IRF520NSTRLPBF | Infineon

Description

Infineon IRF520NSTRLPBF

Infineon MOSFET, N-Channel, 200 mΩ, 9.7 A, D2PAK (TO-263), Surface Mount

Technical data
Channel type    N
Maximum continuous drain current    9.7 A
Maximum drain source voltage    100 V
Series    HEXFET
Package type D2PAK (TO-263)
Mounting Type    Surface Mount
Pin Number    3
Maximum Drain Source Resistance    200 mΩ
Channel Mode    Enhancement
Maximum Gate Threshold Voltage    4V
Maximum Gate Threshold Voltage minimum gate threshold    2V
Maximum power dissipation    48 W
Transistor configuration    Single
Maximum gate source voltage    -20 V, +20 V
Typical gate charge @ Vgs    25 nC at 10 V
Length 10.67mm
Maximum operating temperature    +175 °C
Number of elements per chip    1
Width    9.65mm
Transistor material    Yes
Minimum operating temperature    -55 °C
Height    4.83mm

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SKU: IRF520NSTRLPBF
Barcode: 5059043020310

  • HS CODE: 85412900
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€1,00

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      DOCUMENTATION

    Description

    Infineon IRF520NSTRLPBF

    Infineon MOSFET, N-Channel, 200 mΩ, 9.7 A, D2PAK (TO-263), Surface Mount

    Technical data
    Channel type    N
    Maximum continuous drain current    9.7 A
    Maximum drain source voltage    100 V
    Series    HEXFET
    Package type D2PAK (TO-263)
    Mounting Type    Surface Mount
    Pin Number    3
    Maximum Drain Source Resistance    200 mΩ
    Channel Mode    Enhancement
    Maximum Gate Threshold Voltage    4V
    Maximum Gate Threshold Voltage minimum gate threshold    2V
    Maximum power dissipation    48 W
    Transistor configuration    Single
    Maximum gate source voltage    -20 V, +20 V
    Typical gate charge @ Vgs    25 nC at 10 V
    Length 10.67mm
    Maximum operating temperature    +175 °C
    Number of elements per chip    1
    Width    9.65mm
    Transistor material    Yes
    Minimum operating temperature    -55 °C
    Height    4.83mm

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